Discrete Semiconductor Products
SI6467BDQ-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 6.8A 8TSSOP
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Discrete Semiconductor Products
SI6467BDQ-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 6.8A 8TSSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI6467BDQ-T1-GE3 |
|---|---|
| Drain to Source Voltage (Vdss) | 12 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP |
| Package / Case [custom] | 0.173 " |
| Package / Case [custom] | 4.4 mm |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm |
| Supplier Device Package | 8-TSSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 850 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI6467 Series
P-Channel 12 V 6.8A (Ta) Surface Mount 8-TSSOP
Documents
Technical documentation and resources
No documents available