Discrete Semiconductor Products

TK8S06K3L(T6L1,NQ)

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TRANS MOSFET N-CH SI 60V 8A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK+ T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH SI 60V 8A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK+ T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TK8S06K3L(T6L1,NQ)

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs [Max]	54 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature	Vgs (Max)	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type
Toshiba Semiconductor and Storage TK8S06K3L(T6L1,NQ)	8 A	60 V	54 mOhm	10 nC	25 W	3 V	Surface Mount	175 °C	20 V	MOSFET (Metal Oxide)	DPAK+	6 V 10 V	400 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel

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General part information

N-Channel 60 V 8A (Ta) 25W (Tc) Surface Mount DPAK+

Technical documentation and resources