Specification	FDD86581-F085

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48.4 W
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDD86581_F085 Series

N-Channel PowerTrench® MOSFET 60 V, 25 A, 15 mΩ

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Mounting Type
ON Semiconductor FDD86581-F085	4 V	10 V	N-Channel	-55 °C	175 ░C	880 pF	60 V	15 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	19 nC	MOSFET (Metal Oxide)	25 A	20 V	48.4 W	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®MOSFET 60 V, 25 A, 15 mΩ

Technical documentation and resources