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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK9Y13-60ELX

Active
Nexperia USA Inc.

SINGLE N-CHANNEL 60 V, 7.9 MOHM LOGIC LEVEL MOSFET IN LFPAK56 USING ENHANCED SOA TECHNOLOGY

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK9Y13-60ELX

Active
Nexperia USA Inc.

SINGLE N-CHANNEL 60 V, 7.9 MOHM LOGIC LEVEL MOSFET IN LFPAK56 USING ENHANCED SOA TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK9Y13-60ELX
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]4520 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max) [Max]147 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.9 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.56
10$ 1.30
100$ 1.03
500$ 0.87
Digi-Reel® 1$ 1.56
10$ 1.30
100$ 1.03
500$ 0.87
N/A 2790$ 3.00
Tape & Reel (TR) 1500$ 0.72
3000$ 0.68

Description

General part information

BUK9Y13-60EL Series

Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications.