Specification	IRFU220BTU-AM002

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	40 W, 2.5 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

IRFU220B Series

Power MOSFET, N-Channel, B-FET, 200 V, 4.6 A, 0.9 Ω, IPAK

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor IRFU220BTU-AM002	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	4.6 A	30 V	2.5 W 40 W	IPAK	200 V	N-Channel	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	800 mOhm	390 pF	10 V	16 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRFU220B Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.