Specification	NVH4L045N065SC1

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	187 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	4.3 V

NVH4L045N065SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 33 mohm, 650V, M2, TO247−4L

Part	Qualification	Grade	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Power Dissipation (Max)
ON Semiconductor NVH4L045N065SC1	AEC-Q101	Automotive	4.3 V	1870 pF	55 A	50 mOhm	105 nC	TO-247-4L	N-Channel	15 V 18 V	-55 °C	175 ░C	650 V	Through Hole	TO-247-4	187 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 17.82
		30	$ 14.42
		120	$ 13.58
		510	$ 12.30
Newark	Each	250	$ 11.76
		500	$ 11.43
ON Semiconductor	N/A	1	$ 11.20

Description

General part information

NVH4L045N065SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.