Discrete Semiconductor Products

MJ802G

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 90 V, 30 A, 200 W, TO-204, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 90 V, 30 A, 200 W, TO-204, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	MJ802G

Current - Collector (Ic) (Max) [Max]	30 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	200 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

30 A, 90 V NPN Bipolar Power Transistor

Part	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	Supplier Device Package	Supplier Device Package
ON Semiconductor MJ802G	NPN	TO-204AA TO-3	30 A	800 mV	25	200 W	90 V	2 MHz	Through Hole	TO-204	TO-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel.