Discrete Semiconductor Products

DCB010-TB-E

Obsolete

DIODE ARRAY GP 80V 100MA 3CP

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 80V 100MA 3CP

Technical Specifications

Parameters and characteristics for this part

Specification	DCB010-TB-E

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	100 nA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	3-CP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction	Supplier Device Package	Diode Configuration	Mounting Type
ON Semiconductor DCB010-TB-E	Any Speed	200 mA	80 V	Standard	100 nA	SC-59 SOT-23-3 TO-236-3	4 ns	100 mA	125 °C	3-CP	1 Pair Common Cathode	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 80 V 100mA Surface Mount TO-236-3, SC-59, SOT-23-3

Technical documentation and resources