Discrete Semiconductor Products

MCG18P02A-TP

Obsolete

MCG18P02A-TP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MCG18P02A-TP

Technical Specifications

Parameters and characteristics for this part

Specification	MCG18P02A-TP

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1255 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	52 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	DFN3030-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCG18P02A-TP	52 W	-55 °C	150 °C	18 A	MOSFET (Metal Oxide)	1255 pF	8 V	Surface Mount	29 nC	20 V	900 mV	P-Channel	8.5 mOhm	DFN3030-8	8-PowerWDFN	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 18A 52W Surface Mount DFN3030-8

Technical documentation and resources