Specification	IXTX24N100

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	267 nC
Input Capacitance (Ciss) (Max) @ Vds	8700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	568 W
Rds On (Max) @ Id, Vgs [Max]	400 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

IXTX24N100 Series

DiscMosfet N-CH Std-HiVoltage TO-247AD

Part	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXTX24N100	5.5 V	N-Channel	PLUS247™-3	TO-247-3 Variant	10 V	-55 °C	150 °C	568 W	400 mOhm	MOSFET (Metal Oxide)	20 V	267 nC	Through Hole	8700 pF	1000 V	24 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 21.10
Newark	Each	250	$ 19.55

Description

General part information

IXTX24N100 Series

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

Datasheet

Littelfuse ISOPLUS Isolated Discrete Power Semiconductors Application Note

Technical Document

Littelfuse ISOPLUS Isolated Discrete Power Semiconductors Application Note

Technical Document