VS-50EPU12LHN3

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DIODE GEN PURP 1.2KV 50A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 50A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-50EPU12LHN3

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	330 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	262 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.55 V

Part	Supplier Device Package	Speed	Qualification	Grade	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Technology
Vishay General Semiconductor - Diodes Division VS-50EPU12LHN3	TO-247AD	200 mA 500 ns	AEC-Q101	Automotive	TO-247-2	50 A	175 ░C	-55 C	2.55 V	Through Hole	1.2 kV	330 µA	262 ns	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 2.59

General part information

Diode 1200 V 50A Through Hole TO-247AD

Technical documentation and resources