Specification	R1EX25512ATA00I#U0

Clock Frequency	5 MHz
Memory Format	EEPROM
Memory Interface	SPI
Memory Organization	64K x 8
Memory Size	64 kb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Supplier Device Package	8-TSSOP
Technology	EEPROM
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	1.8 V
Write Cycle Time - Word, Page	5 ms

R1EX25512ATA00A Series

Serial Peripheral Interface 512K EEPROM (64-Kword × 8-bit)

Part	Memory Type	Memory Format	Access Time	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Write Cycle Time - Word, Page	Supplier Device Package	Memory Organization	Memory Size	Package / Case	Package / Case [custom]	Package / Case [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Clock Frequency	Package / Case [y]	Package / Case [x]
Renesas Electronics Corporation R1EX25512ATA00I#S0	Non-Volatile	EEPROM	60 ns	EEPROM	Surface Mount	85 °C	-40 °C	SPI	5 ms	8-TSSOP	64K x 8	64 kb	8-TSSOP	0.173 "	4.4 mm	1.8 V	5.5 V	5 MHz
Renesas Electronics Corporation R1EX25512ATA00A#S0	Non-Volatile	EEPROM		EEPROM	Surface Mount	85 °C	-40 °C	SPI	5 ms	8-TSSOP	64K x 8	64 kb	8-TSSOP	0.173 "	4.4 mm	1.8 V	5.5 V	5 MHz
Renesas Electronics Corporation R1EX25512ASA00I#S0	Non-Volatile	EEPROM	60 ns	EEPROM	Surface Mount	85 °C	-40 °C	SPI	5 ms	8-SOP	64K x 8	64 kb	8-SOIC			1.8 V	5.5 V	5 MHz	3.9 mm	0.154 in
Renesas Electronics Corporation R1EX25512ATA00I#U0	Non-Volatile	EEPROM		EEPROM	Surface Mount	85 °C	-40 °C	SPI	5 ms	8-TSSOP	64K x 8	64 kb	8-TSSOP	0.173 "	4.4 mm	1.8 V	5.5 V	5 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 1.56

Description

General part information

R1EX25512ATA00A Series

R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). They realize High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. They also have a 128-byte page programming function to make their write operation faster.

Documents

Technical documentation and resources

R1EX25512ASA00I/R1EX25512ATA00I Datasheet

Datasheet