Discrete Semiconductor Products

SUD20N10-66L-GE3

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MOSFET N-CH 100V 16.9A TO252

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Discrete Semiconductor Products

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MOSFET N-CH 100V 16.9A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SUD20N10-66L-GE3

Current - Continuous Drain (Id) @ 25°C	16.9 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	41.7 W, 2.1 W
Rds On (Max) @ Id, Vgs	66 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SUD20N10-66L-GE3	Surface Mount	N-Channel	66 mOhm	100 V	20 V	-55 °C	150 °C	16.9 A	860 pF	30 nC	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	2.1 W 41.7 W

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General part information

N-Channel 100 V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252

Technical documentation and resources