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ONSEMI FDS4559
Discrete Semiconductor Products

FDS9934C

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 6.5 A, 6.5 A, 0.025 OHM

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ONSEMI FDS4559
Discrete Semiconductor Products

FDS9934C

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 6.5 A, 6.5 A, 0.025 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS9934C
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C6.5 A, 5 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.69
100$ 0.53
500$ 0.45
1000$ 0.37
Digi-Reel® 1$ 0.84
10$ 0.69
100$ 0.53
500$ 0.45
1000$ 0.37
Tape & Reel (TR) 2500$ 0.35
5000$ 0.33
12500$ 0.31
25000$ 0.31
NewarkEach (Supplied on Cut Tape) 500$ 0.48
ON SemiconductorN/A 1$ 0.25

Description

General part information

FDS9934C Series

These dual N- and P-channel enhancement mode power field effect transistors are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.