Discrete Semiconductor Products

V12P10-M3/86A

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DIODE SCHOTTKY 100V 12A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 12A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V12P10-M3/86A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Current - Reverse Leakage @ Vr	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Technology
Vishay General Semiconductor - Diodes Division V12P10HM3_A/I	400 µA	AEC-Q101	150 °C	-40 °C	3.9 A	TO-277A (SMPC)	120 V	Automotive	200 mA 500 ns	830 mV	3-PowerDFN TO-277	Surface Mount	Schottky
Vishay General Semiconductor - Diodes Division V12P10-M3/86A	250 µA		150 °C	-40 °C	12 A	TO-277A (SMPC)	100 V		200 mA 500 ns	700 mV	3-PowerDFN TO-277	Surface Mount	Schottky
Vishay General Semiconductor - Diodes Division V12P10HM3_A/H	400 µA	AEC-Q101	150 °C	-40 °C	12 A	TO-277A (SMPC)	120 V	Automotive	200 mA 500 ns	830 mV	3-PowerDFN TO-277	Surface Mount	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 12A Surface Mount TO-277A (SMPC)

Technical documentation and resources