Discrete Semiconductor Products

2SC3672-O(T2ASH,FM

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 300V 0.1A MSTM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 300V 0.1A MSTM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3672-O(T2ASH,FM

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-71
Power - Max [Max]	1 W
Supplier Device Package	MSTM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SC3672-O(T2ASH,FM	100 mA	1 W	SC-71	300 V	150 °C	30	500 mV	MSTM	Through Hole	NPN	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 300 V 100 mA 80MHz 1 W Through Hole MSTM

Technical documentation and resources