Discrete Semiconductor Products

BSH205,215

Obsolete

MOSFET P-CH 12V 750MA TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 750MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSH205,215

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	417 mW
Rds On (Max) @ Id, Vgs	400 mΩ
Supplier Device Package	SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	680 mV

Part	Vgs (Max)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Technology
Freescale Semiconductor - NXP BSH205,215	8 V	SC-59 SOT-23-3 TO-236-3	SOT-23 (TO-236AB)	3.8 nC	-55 °C	150 °C	1.8 V 4.5 V	P-Channel	680 mV	400 mΩ	417 mW	750 mA	200 pF	12 V	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 750mA (Ta) 417mW (Ta) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources