PSMN029-100HLX

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MOSFET 2N-CH 100V 30A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 30A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN029-100HLX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	29.6 nC
Input Capacitance (Ciss) (Max) @ Vds	3637 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	68 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration
Freescale Semiconductor - NXP PSMN029-100HLX	Logic Level Gate	29.6 nC	8-LFPAK56 SOT-1205	2.1 V	3637 pF	30 A	LFPAK56D	27 mOhm	Surface Mount	68 W	100 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	2 N-Channel (Dual)

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General part information

Mosfet Array 100V 30A (Ta) 68W (Ta) Surface Mount LFPAK56D

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