Discrete Semiconductor Products
EMT2T2R
ActiveRohm Semiconductor
TRANS GP BJT PNP 50V 0.15A 6-PIN EMT T/R
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Discrete Semiconductor Products
EMT2T2R
ActiveRohm Semiconductor
TRANS GP BJT PNP 50V 0.15A 6-PIN EMT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EMT2T2R |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 140 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-666, SOT-563 |
| Supplier Device Package | EMT6 |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.39 | |
| 10 | $ 0.30 | |||
| 100 | $ 0.18 | |||
| 500 | $ 0.17 | |||
| 1000 | $ 0.11 | |||
| 2000 | $ 0.10 | |||
Description
General part information
EMT2T2 Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.· Ultra-compact complex bipolar transistor· For pre-amplifier· Small Surface Mount Package· Pb Free/RoHS Compliant
Documents
Technical documentation and resources
No documents available