Discrete Semiconductor Products

BYX86TAP

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DIODE AVALANCHE 1000V 2A SOD57

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Discrete Semiconductor Products

Active

DIODE AVALANCHE 1000V 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BYX86TAP

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Speed	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division BYX86TAP	Avalanche	Through Hole	2 A	4 µs	20 pF	175 ░C	-55 C	SOD-57	Axial SOD-57	Standard Recovery >500ns	200 mA	1 µA	1000 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 2A Through Hole SOD-57

Technical documentation and resources