Specification	FDD120AN15A0

Current - Continuous Drain (Id) @ 25°C	2.8 A, 14 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	120 mΩ
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDD120AN15A0 Series

N-Channel PowerTrench<sup>®</sup> MOSFET, 150V, 14A, 120mΩ

Part	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)
ON Semiconductor FDD120AN15A0	65 W	TO-252AA	-55 °C	175 ░C	120 mΩ	4 V	MOSFET (Metal Oxide)	14.5 nC	2.8 A 14 A	N-Channel	150 V	770 pF	Surface Mount	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®MOSFET, 150V, 14A, 120mΩ

Technical documentation and resources