Discrete Semiconductor Products

DLE30E

Obsolete

DIODE GEN PURP 400V 3A AXIAL

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 400V 3A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	DLE30E

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Speed
ON Semiconductor DLE30C-KC9	200 V	3 A	DO-201AD Axial	35 ns	Axial	Through Hole	Standard	10 µA	150 °C	980 mV	200 mA 500 ns
ON Semiconductor DLE30E	400 V	3 A	DO-201AD Axial	30 ns	Axial	Through Hole	Standard	20 µA	150 °C	1.25 V	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 3A Through Hole Axial

Technical documentation and resources