Integrated Circuits (ICs)

RMLV0408EGSB-4S2#HA0

Unknown

Renesas Electronics Corporation

4MB ADVANCED LPSRAM (512-KWORD × 8-BIT)

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Integrated Circuits (ICs)

RMLV0408EGSB-4S2#HA0

Unknown

Renesas Electronics Corporation

4MB ADVANCED LPSRAM (512-KWORD × 8-BIT)

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RMLV0408EGSB-4S2#HA0

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	512 kb
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	32-SOIC
Package / Case [x]	0.4 in
Package / Case [y]	10.16 mm
Supplier Device Package	32-TSOP II
Technology	SRAM
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

RMLV0408E Series

4Mb Advanced LPSRAM (512-kword × 8-bit)

Part	Memory Type	Memory Format	Technology	Memory Size	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Mounting Type	Memory Interface	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case [x]	Package / Case [y]	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [x]	Package / Case [custom]	Package / Case [x]
Renesas Electronics Corporation RMLV0408EGSB-4S2#HA0	Volatile	SRAM	SRAM	512 kb	32-TSOP II	85 °C	-40 °C	45 ns	Surface Mount	Parallel	512 K	45 ns	45 ns	0.4 in	10.16 mm	32-SOIC	2.7 V	3.6 V
Renesas Electronics Corporation RMLV0408EGSA-4S2#KA1	Volatile	SRAM	SRAM	512 kb	32-TSOP I	85 °C	-40 °C	45 ns	Surface Mount	Parallel	512 K	45 ns	45 ns				2.7 V	3.6 V	0.465 "	32-TFSOP	11.8 mm
Renesas Electronics Corporation RMLV0408EGSP-4S2#CA1	Volatile	SRAM	SRAM	512 kb	32-SOP	85 °C	-40 °C	45 ns	Surface Mount	Parallel	512 K	45 ns	45 ns			32-SOIC	2.7 V	3.6 V
Renesas Electronics Corporation RMLV0408EGSB-4S2#AA1	Volatile	SRAM	SRAM	512 kb	32-TSOP II	85 °C	-40 °C	45 ns	Surface Mount	Parallel	512 K	45 ns	45 ns	0.4 in	10.16 mm	32-SOIC	2.7 V	3.6 V
Renesas Electronics Corporation RMLV0408EGSB-4S2#AA0	Volatile	SRAM	SRAM	512 kb	32-TSOP II	85 °C	-40 °C	45 ns	Surface Mount	Parallel	512 K	45 ns	45 ns	0.4 in	10.16 mm	32-SOIC	2.7 V	3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

RMLV0408E Series

The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524, 288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP.

Documents

Technical documentation and resources