Specification	NTE4151PT1G

Current - Continuous Drain (Id) @ 25°C	760 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	156 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-89, SOT-490
Power Dissipation (Max)	313 mW
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	SC-89-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.2 V

NTE4151P Series

Single P-Channel Gate Zener Small Signal MOSFET -20V, -760mA, 360mΩ

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id
ON Semiconductor NTE4151PT1G	P-Channel	20 V	SC-89 SOT-490	1.8 V 4.5 V	SC-89-3	156 pF	360 mOhm	313 mW	Surface Mount	6 V	760 mA	-55 °C	150 °C	2.1 nC	MOSFET (Metal Oxide)	1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Small Signal MOSFET -20 V, -540 mA, Single P-Channel, Gate Zener, SC-75 and SC-89

Technical documentation and resources