Discrete Semiconductor Products
RQ7E055ATTCR
ActiveRohm Semiconductor
PCH -30V -5.5A MIDDLE POWER MOSFET
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Discrete Semiconductor Products
RQ7E055ATTCR
ActiveRohm Semiconductor
PCH -30V -5.5A MIDDLE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ7E055ATTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 24.5 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ7E055AT Series
RQ7E055AT which is Small Surface Mount package is suitable for Switching.
Documents
Technical documentation and resources