Specification	CNY174SVM

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	320 %
Current Transfer Ratio (Min) [Min]	160 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Package / Case	6-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]	4 µs
Rise / Fall Time (Typ) [custom]	3.5 µs
Supplier Device Package	6-SMD
Turn On / Turn Off Time (Typ)	3 µs, 2 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	70 V

CNY174M Series

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Part	Vce Saturation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Package / Case	Current Transfer Ratio (Max)	Turn On / Turn Off Time (Typ)	Number of Channels	Input Type	Voltage - Output (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Min) [Min]	Current - Output / Channel	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Package / Case	Package / Case	Package / Case
ON Semiconductor CNY174SR2M	400 mV	100 °C	-40 °C	Surface Mount	6-SMD	6-SMD Gull Wing	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms
ON Semiconductor CNY174SVM	400 mV	100 °C	-40 °C	Surface Mount	6-SMD	6-SMD Gull Wing	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms
ON Semiconductor CNY174W	300 mV	100 °C	-55 °C	Through Hole	6-DIP	6-DIP	320 %	2 µs 3 µs	1	DC	70 V	100 mA	160 %	50 mA	1 µs	2 µs	1.35 V	5300 Vrms	10.16 mm	10.16 mm
ON Semiconductor CNY174M	400 mV	100 °C	-40 °C	Through Hole	6-DIP	6-DIP	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms		7.62 mm	0.3 in
ON Semiconductor CNY174SD	300 mV	100 °C	-55 °C	Surface Mount	6-SMD	6-SMD Gull Wing	320 %	2 µs 3 µs	1	DC	70 V	100 mA	160 %	50 mA	1 µs	2 µs	1.35 V	5300 Vrms
ON Semiconductor CNY174VM	400 mV	100 °C	-40 °C	Through Hole	6-DIP	6-DIP	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms		7.62 mm	0.3 in
ON Semiconductor CNY174VM	400 mV	100 °C	-40 °C	Through Hole	6-DIP	6-DIP	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms		7.62 mm	0.3 in
ON Semiconductor CNY174SM	400 mV	100 °C	-40 °C	Surface Mount	6-SMD	6-SMD Gull Wing	320 %	2 µs 3 µs	1	DC	70 V	60 mA	160 %	50 mA	4 µs	3.5 µs	1.35 V	4170 Vrms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 0.24
ON Semiconductor	N/A	1	$ 0.19

Description

General part information

CNY174M Series

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.