Discrete Semiconductor Products

PMZB600UNEYL

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MOSFET N-CH 20V 600MA DFN1006B-3

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Discrete Semiconductor Products

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MOSFET N-CH 20V 600MA DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB600UNEYL

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	21.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	2.7 W, 360 mW
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	FET Type
Freescale Semiconductor - NXP PMZB600UNELYL	1.2 V 4.5 V	0.7 nC	-55 °C	150 °C	600 mA	620 mOhm	360 mW	DFN1006B-3	Surface Mount	MOSFET (Metal Oxide)	20 V	21.3 pF	8 V	3-XFDFN	950 mV	N-Channel
Freescale Semiconductor - NXP PMZB600UNEYL	1.2 V 4.5 V	0.7 nC	-55 °C	150 °C	600 mA	620 mOhm	2.7 W 360 mW	DFN1006B-3	Surface Mount	MOSFET (Metal Oxide)	20 V	21.3 pF	8 V	3-XFDFN	950 mV	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources