Specification	PQMD2Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60
Frequency - Transition	230 MHz, 180 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	230 mW
Qualification	AEC-Q101
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	DFN1010B-6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PQMD2 Series

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Grade	Frequency - Transition	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Qualification	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Base (R1)	Package / Case	Power - Max [Max]
Nexperia USA Inc. PQMD2Z	50 V	22 kOhms	1 µA	Automotive	180 MHz 230 MHz	DFN1010B-6	1 NPN 1 PNP - Pre-Biased (Dual)	60	AEC-Q101	100 mA	150 mV	Surface Mount	22 kOhms	6-XFDFN Exposed Pad	230 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 230mW Surface Mount DFN1010B-6

Technical documentation and resources