Specification	NTZD3156CT1G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	540 mA, 430 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	72 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs [Max]	550 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

NTZD3156C Series

Small Signal MOSFET 20V 540mA 550 mOhm Dual Complementary SOT-563 With 100K G-S Resistors

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration	Mounting Type	FET Feature	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTZD3156CT5G	-55 °C	150 °C	430 mA 540 mA	250 mW	MOSFET (Metal Oxide)	550 mOhm	1 V	SOT-563	N and P-Channel	Surface Mount	Logic Level Gate	SOT-563 SOT-666	20 V	72 pF
ON Semiconductor NTZD3156CT1G	-55 °C	150 °C	430 mA 540 mA	250 mW	MOSFET (Metal Oxide)	550 mOhm	1 V	SOT-563	N and P-Channel	Surface Mount	Logic Level Gate	SOT-563 SOT-666	20 V	72 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET 20V Complementary with 100K Integrated G-S Resistors, 0.55 ohm at 4.5V, 0.9 ohm at -4.5V, 1.6x1.6x0.5mm, SOT-563 Package

Technical documentation and resources