Discrete Semiconductor Products

SISA24DN-T1-GE3

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MOSFET N-CH 25V 60A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 25V 60A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISA24DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	2650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs [Max]	1.4 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Package / Case	Vgs (Max)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SISA24DN-T1-GE3	PowerPAK® 1212-8	-16 V 20 V	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	2.1 V	60 A	2650 pF	52 W	26 nC	1.4 mOhm	-55 °C	150 °C	25 V	Surface Mount	PowerPAK® 1212-8

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General part information

N-Channel 25 V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources