Discrete Semiconductor Products

PMPB14XNX

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MOSFET N-CH 40V 8.1A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 40V 8.1A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB14XNX

Current - Continuous Drain (Id) @ 25°C	8.1 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	3.8 W, 12.5 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type
Freescale Semiconductor - NXP PMPB14XNX	1.5 V 4.5 V	8.1 A	3.8 W 12.5 W	8 V	6-UDFN Exposed Pad	40 V	18 mOhm	MOSFET (Metal Oxide)	DFN2020MD-6	900 mV	1625 pF	-55 °C	150 °C	28 nC	Surface Mount	N-Channel

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General part information

N-Channel 40 V 8.1A (Ta) 3.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources