Discrete Semiconductor Products

VS-EPH3006-N3

Active

DIODE GP 600V 30A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EPH3006-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	26 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.65 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Supplier Device Package	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-EPH3006-N3	2.65 V	Through Hole	175 ░C	-65 C	30 A	Standard	26 ns	30 µA	600 V	200 mA 500 ns	TO-247-2	TO-247AC Modified
Vishay General Semiconductor - Diodes Division VS-EPH3006HN3	2.65 V	Through Hole	175 ░C	-65 C	30 A	Standard	26 ns	30 µA	600 V	200 mA 500 ns	TO-247-2	TO-247AC Modified	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division VS-EPH3006L-N3	2.65 V	Through Hole	175 ░C	-55 C	30 A	Standard	26 ns	30 µA	600 V	200 mA 500 ns	TO-247-2	TO-247AD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole TO-247AC Modified

Technical documentation and resources