R6050JNZC17
Active600V 50A TO-3PF, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
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R6050JNZC17
Active600V 50A TO-3PF, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | R6050JNZC17 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 120 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 120 W |
| Rds On (Max) @ Id, Vgs | 83 mOhm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6050JNZ Series
R6050JNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Documents
Technical documentation and resources