Specification	KSH45H11ITU

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1.75 W
Supplier Device Package	IPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

KSH45H11 Series

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	Operating Temperature	Transistor Type	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSH45H11TF	10 µA	40 hFE	8 A	80 V	40 MHz	Surface Mount	150 °C	PNP	1.75 W	DPAK	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor KSH45H11ITU	10 µA	40 hFE	8 A	80 V	40 MHz	Through Hole	150 °C	PNP	1.75 W	IPAK	1 V	IPAK TO-251-3 Short Leads TO-251AA
ON Semiconductor KSH45H11TM	10 µA		8 A	80 V	40 MHz	Surface Mount	150 °C	PNP	1.75 W	TO-252 (DPAK)	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60
ON Semiconductor KSH45H11TM	10 A	40 hFE	8 A	80 V	40 MHz	Surface Mount	150 °C	PNP	1.75 W	DPAK	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

General-purpose power and switching such as output or driver stages in applications D-PAK for surface mount applications.