
Discrete Semiconductor Products
RMPG06G-E3/100
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A MPG06
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Discrete Semiconductor Products
RMPG06G-E3/100
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A MPG06
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RMPG06G-E3/100 |
|---|---|
| Capacitance @ Vr, F | 6.6 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | MPG06, Axial |
| Reverse Recovery Time (trr) | 150 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | MPG06 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 10000 | $ 0.14 | |
| 50000 | $ 0.14 | |||
Description
General part information
RMPG06 Series
Diode 400 V 1A Through Hole MPG06
Documents
Technical documentation and resources