Discrete Semiconductor Products

FDC5614P_D87Z

Obsolete

MOSFET P-CH 60V 3A SUPERSOT6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 3A SUPERSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	FDC5614P_D87Z

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	759 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	FET Type	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDC5614P_D87Z	24 nC	3 A	60 V	Surface Mount	105 mOhm	MOSFET (Metal Oxide)	P-Channel	20 V	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	3 V	-55 °C	150 °C	SuperSOT™-6	759 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Technical documentation and resources