Discrete Semiconductor Products

NP90N04VLK-E1-AY

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MOSFET N-CH 40V 90A TO252

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Discrete Semiconductor Products

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MOSFET N-CH 40V 90A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	NP90N04VLK-E1-AY

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	147 W, 1.2 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	MP-3ZP
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Mounting Type	Supplier Device Package	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Renesas Electronics Corporation NP90N04VLK-E1-AY	102 nC	2.5 V	2.8 mOhm	1.2 W 147 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MP-3ZP	TO-252	5700 pF	40 V	4.5 V 10 V	N-Channel	175 °C	90 A	20 V

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General part information

N-Channel 40 V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252 (MP-3ZP)

Technical documentation and resources

No documents available