Specification	NVB260N65S3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1010 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NVB260N65S3 Series

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, D2PAK

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVB260N65S3	N-Channel	650 V	30 V	24 nC	10 V	Surface Mount	TO-263 (D2PAK)	1010 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	90 W	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V	12 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.59
		10	$ 2.35
		100	$ 1.65
	Digi-Reel®	1	$ 3.59
		10	$ 2.35
		100	$ 1.65
	Tape & Reel (TR)	800	$ 1.28
		1600	$ 1.21
Newark	Each (Supplied on Cut Tape)	1	$ 4.13
		1	$ 4.13
ON Semiconductor	N/A	1	$ 1.11

Description

General part information

NVB260N65S3 Series

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability