Discrete Semiconductor Products

FQP4N50

Obsolete

ON Semiconductor

MOSFET N-CH 500V 3.4A TO220-3

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Discrete Semiconductor Products

FQP4N50

Obsolete

ON Semiconductor

MOSFET N-CH 500V 3.4A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQP4N50

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs [Max]	2.7 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQP4N20L Series

Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 200 V, 3.8 A, 1.35 Ω, TO-220

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQP47P06_NW82049	47 A	110 nC	TO-220-3	10 V	60 V	P-Channel	Through Hole	4 V	26 mOhm	-55 °C	175 ░C	TO-220-3	3600 pF	MOSFET (Metal Oxide)	25 V
ON Semiconductor FQP44N08	44 A	50 nC	TO-220-3	10 V	80 V	N-Channel	Through Hole	4 V	34 mOhm	-55 °C	175 ░C	TO-220-3		MOSFET (Metal Oxide)	25 V	1430 pF	127 W
ON Semiconductor FQP4N20L	3.8 A		TO-220-3		200 V	N-Channel	Through Hole	2 V	1.35 Ohm	-55 °C	150 °C	TO-220-3		MOSFET (Metal Oxide)	20 V	310 pF	45 W	5.2 nC	10 V	5 V
ON Semiconductor FQP4N50	3.4 A	13 nC	TO-220-3	10 V	500 V	N-Channel	Through Hole	5 V		-55 °C	150 °C	TO-220-3		MOSFET (Metal Oxide)	30 V	460 pF	70 W				2.7 Ohm
ON Semiconductor FQP4N20L	3.8 A		TO-220-3		200 V	N-Channel	Through Hole	2 V	1.35 Ohm	-55 °C	150 °C	TO-220-3		MOSFET (Metal Oxide)	20 V	310 pF	45 W	5.2 nC	10 V	5 V
ON Semiconductor FQP4N90	4.2 A		TO-220-3	10 V	900 V	N-Channel	Through Hole	5 V		-55 °C	150 °C	TO-220-3		MOSFET (Metal Oxide)	30 V	1100 pF	140 W	30 nC			3.3 Ohm
ON Semiconductor FQP4N80	3.9 A	25 nC	TO-220-3	10 V	800 V	N-Channel	Through Hole	5 V	3.6 Ohm	-55 °C	150 °C	TO-220-3	880 pF	MOSFET (Metal Oxide)	30 V		130 W
ON Semiconductor FQP44N08	44 A	50 nC	TO-220-3	10 V	80 V	N-Channel	Through Hole	4 V	34 mOhm	-55 °C	175 ░C	TO-220-3		MOSFET (Metal Oxide)	25 V	1430 pF	127 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP4N20L Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Documents

Technical documentation and resources