Discrete Semiconductor Products

VS-MUR820-N3

Obsolete

DIODE GP 200V 8A TO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GP 200V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-MUR820-N3

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	20 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	975 mV

Part	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
Vishay General Semiconductor - Diodes Division MUR820	Through Hole	TO-220AC	200 V	35 ns	Standard	175 ░C	-65 C	TO-220-2	8 A	5 ÁA	975 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-MUR820-N3	Through Hole	TO-220AC	200 V	20 ns	Standard	175 ░C	-65 C	TO-220-2	8 A	5 ÁA	975 mV	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 200 V 8A Through Hole TO-220AC

Technical documentation and resources