Specification	FFSM0865B

Capacitance @ Vr, F	336 pF
Current - Average Rectified (Io)	11.6 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	4-PQFN (8x8)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

FFSM0865B Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Speed	Mounting Type	Package / Case	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor FFSM0865B	40 µA	175 ░C	-55 C	11.6 A	650 V	336 pF	No Recovery Time	Surface Mount	4-PowerTSFN	SiC (Silicon Carbide) Schottky	0 ns	4-PQFN (8x8)	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.55
		10	$ 2.32
		100	$ 1.62
		500	$ 1.32
		1000	$ 1.22
	Digi-Reel®	1	$ 3.55
		10	$ 2.32
		100	$ 1.62
		500	$ 1.32
		1000	$ 1.22
	Tape & Reel (TR)	3000	$ 1.14
ON Semiconductor	N/A	1	$ 1.05

Description

General part information

FFSM0865B Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.