Discrete Semiconductor Products

KSC2682OS

Obsolete

TRANS NPN 180V 0.1A TO-126-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 180V 0.1A TO-126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC2682OS

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	180 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSC2682OS	180 V	150 °C	100 mA	200 MHz	1.2 W	Through Hole	TO-126-3	1 µA	TO-126-3 TO-225AA	NPN	100	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 180 V 100 mA 200MHz 1.2 W Through Hole TO-126-3

Technical documentation and resources