Discrete Semiconductor Products

MUR160G

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FAST / ULTRAFAST DIODE, 600 V, 1.35 A, SINGLE, 1.35 V, 60 NS, 35 A

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Discrete Semiconductor Products

Active

FAST / ULTRAFAST DIODE, 600 V, 1.35 A, SINGLE, 1.35 V, 60 NS, 35 A

Technical Specifications

Parameters and characteristics for this part

Specification	MUR160G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Package / Case
ON Semiconductor MUR160RLG	175 ░C	-65 C	600 V	Standard	1.25 V	Through Hole	200 mA 500 ns	5 µA	75 ns	1 A	Axial	Axial DO-204AL DO-41
ON Semiconductor MUR160G	175 ░C	-65 C	600 V	Standard	1.25 V	Through Hole	200 mA 500 ns	5 µA	75 ns	1 A	Axial	Axial DO-204AL DO-41

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

All external surfaces corrosion-resistant and terminal leads are readily solderable

Cathode indicated by polarity band

Low forward voltage

Technical documentation and resources