Discrete Semiconductor Products

SI1304BDL-T1-E3

Obsolete

MOSFET N-CH 30V 900MA SC70-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 900MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1304BDL-T1-E3

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	370 mW, 340 mW
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1304BDL-T1-E3	1.3 V	100 pF	12 V	N-Channel	2.7 nC	2.5 V 4.5 V	340 mW 370 mW	-55 °C	150 °C	900 mA	SC-70 SOT-323	Surface Mount	SC-70-3	30 V	MOSFET (Metal Oxide)	270 mOhm
Vishay General Semiconductor - Diodes Division SI1304BDL-T1-GE3	1.3 V	100 pF	12 V	N-Channel	2.7 nC	2.5 V 4.5 V	340 mW 370 mW	-55 °C	150 °C	900 mA	SC-70 SOT-323	Surface Mount	SC-70-3	30 V	MOSFET (Metal Oxide)	270 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 900mA (Tc) 340mW (Ta), 370mW (Tc) Surface Mount SC-70-3

Technical documentation and resources