Discrete Semiconductor Products

RJK03M8DNS-00#J5

Obsolete

MOSFET N-CH 30V 30A 8HWSON

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8HWSON

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M8DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2590 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03M8DNS-00#J5	20 W	150 °C	14.5 nC	Surface Mount	30 A	5.2 mOhm	N-Channel	MOSFET (Metal Oxide)	8-HWSON (3.3x3.3)	2590 pF	8-PowerWDFN	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	325000	$ 0.84

General part information

The RJK03M8DNS is a N Channel Power MOSFET.

Technical documentation and resources