Discrete Semiconductor Products

SI1428EDH-T1-GE3

Obsolete

MOSFET N-CHANNEL 30V 4A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL 30V 4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1428EDH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	2.8 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI1428EDH-T1-GE3	1.3 V	45 mOhm	4 A	MOSFET (Metal Oxide)	Surface Mount	30 V	-55 °C	150 °C	SC-70-6	10 V	2.5 V	N-Channel	13.5 nC	6-TSSOP SC-88 SOT-363	2.8 W	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources