Discrete Semiconductor Products

FQA55N10

Obsolete

MOSFET N-CH 100V 61A TO3P

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 61A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	FQA55N10

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQA5N90	40 nC	-55 °C	150 °C	900 V	5 V	5.8 A	2.3 Ohm	185 W	30 V	Through Hole	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	10 V	N-Channel	1550 pF	TO-3P
ON Semiconductor FQA55N10		-55 °C	175 ░C	100 V	4 V	61 A	26 mOhm		25 V	Through Hole	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	10 V	N-Channel		TO-3P	190 W	98 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 61A (Tc) 190W (Tc) Through Hole TO-3P

Technical documentation and resources