Discrete Semiconductor Products

FQA90N10V2

Obsolete

ON Semiconductor

100V 105A 330W 10MΩ@10V,52.5A 4V 1 N-CHANNEL TO-3P MOSFETS ROHS

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Discrete Semiconductor Products

FQA90N10V2

Obsolete

ON Semiconductor

100V 105A 330W 10MΩ@10V,52.5A 4V 1 N-CHANNEL TO-3P MOSFETS ROHS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA90N10V2

Current - Continuous Drain (Id) @ 25°C	105 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	191 nC
Input Capacitance (Ciss) (Max) @ Vds	6150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs [Max]	10 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQA9P25 Series

Power MOSFET, P-Channel, QFET<sup>®</sup>, -250V, -10.5A, 620mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQA90N10V2	10 V	6150 pF	30 V	-55 °C	175 ░C	330 W	191 nC	TO-3P	N-Channel	Through Hole	100 V	10 mOhm	105 A	4 V	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3
ON Semiconductor FQA9N90-F109	10 V		30 V	-55 °C	150 °C	240 W		TO-3PN	N-Channel	Through Hole	900 V		8.6 A	5 V	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	1.3 Ohm	72 nC
ON Semiconductor FQA90N10V2	10 V	6150 pF	30 V	-55 °C	175 ░C	330 W	191 nC	TO-3P	N-Channel	Through Hole	100 V	10 mOhm	105 A	4 V	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3
ON Semiconductor FQA9N90C	10 V		30 V	-55 °C	150 °C		58 nC	TO-3P	N-Channel	Through Hole	900 V		9 A	5 V	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	1.4 Ohm
ON Semiconductor FQA9P25	10 V		30 V	-55 °C	150 °C	150 W	38 nC	TO-3P	P-Channel	Through Hole	250 V		10.5 A	5 V	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	620 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	75	$ 4.05
		75	$ 4.05
LCSC	N/A	1	$ 0.00

Description

General part information

FQA9P25 Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources