Specification	NVD5413NT4G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1725 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTD5413N Series

Power MOSFET 60V 30A 26 mOhm Single N−Channel DPAK

Part	Qualification	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NVD5413NT4G	AEC-Q101	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	68 W	Automotive	DPAK	60 V	30 A	10 V	MOSFET (Metal Oxide)	20 V	1725 pF	46 nC	Surface Mount	N-Channel	26 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTD5413N Series

The NTD/NTB/NTP54xxN series are advanced planar 60V N-Channel power MOSFET ideal for use in DC motor drives, LED drivers, power supplies, converters, pulse width modulation (PWM) controls and bridge circuits where diode speed and commutating safe operating areas are crucial and benefit from an additional safety margin against unexpected voltage transients that these devices provide.