IXTT3N200P3HV
ActiveDISC MOSFET N-CH STD-POLAR3 TO-268AA/ TUBE
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IXTT3N200P3HV
ActiveDISC MOSFET N-CH STD-POLAR3 TO-268AA/ TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTT3N200P3HV |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 70 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) [Max] | 520 W |
| Rds On (Max) @ Id, Vgs | 8 Ohm |
| Supplier Device Package | TO-268HV (IXTT) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTT3N200P3HV Series
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources